EN

AW406008NSTR

60V 0.9Ω N-channel MOSFET

Product details

Parameters

Type N
VDS (V) 60
VGS (V) ±20
VGS(th) typ.(V) 1.5
RDS(ON)@10V max.(mΩ) 2500
RDS(ON)@4.5V max.(mΩ) 3000
RDS(ON)@2.5V max.(mΩ) /
ID (A) 0.34
Qg @10V (nC) 0.29
Temperature -55℃~150℃
ESD YES
Package (mm) -3L

Package | Pins | Size

-3L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge ESD Protected

Description

VDS RDS(ON) Typ. ID 60V 0.9Ω@ VGS= 10V 0.34A 1.1Ω@ VGS= 4.5V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW406008_EN_V1.0 英文   2026-07-09