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AWP410020PTOR

100V P 沟道 MOSFET

Datasheet :
Preview - AWP410020PTOR - Datasheet

Product details

Parameters

Type P
VDS (V) -100
VGS (V) ±20
VGS(th) typ.(V) -2.2
RDS(ON)@10V max.(mΩ) 127
RDS(ON)@4.5V max.(mΩ) /
RDS(ON)@2.5V max.(mΩ) /
ID (A) -17
Qg @10V (nC) 48
Temperature -55℃~150℃
ESD NO
Package (mm) TO252-2L

Package | Pins | Size

TO252-2L

Features

沟槽技术功率 MOSFET 低 RDS(ON) 低栅极电荷 低栅极电阻 100% ΔVDS 测试

Description

VDS RDS(ON) Typ. ID -100V 100mΩ @ VGS = -10V -17A

Technical documentation
Type
Title
Language
Date
Datasheet DS_AWP410020_EN_V1.0 英文   2026-09-17