EN

AWP402075NDNR

20V 6.0mΩ N 沟道 MOSFET

Product details

Parameters

Type N
VDS (V) 20
VGS (V) ±12
VGS(th) typ.(V) 0.7
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) 8.0
RDS(ON)@2.5V max.(mΩ) 11.0
ID (A) 15
Qg @10V (nC) /
Temperature -55℃~150℃
ESD NO
Package (mm)

Package | Pins | Size

Features

沟槽技术 低 RDS(ON) 低栅极电荷

Description

VDS RDS(ON) Typ. ID 20V 6.0mΩ@VGS = 4.5V 15A 6.6mΩ@VGS = 4.0V 6.7mΩ@VGS = 3.8V 7.2mΩ@VGS = 3.1V 7.0mΩ@VGS = 2.5V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AWP402075_EN_V1.0 英文   2026-09-22