| Type |
P |
| VDS
(V) |
-20 |
| VGS
(V) |
±10 |
| VGS(th) typ.(V) |
-0.6 |
| RDS(ON)@10V max.(mΩ) |
/ |
| RDS(ON)@4.5V max.(mΩ) |
4.4 |
| RDS(ON)@2.5V max.(mΩ) |
5.6 |
| ID
(A) |
-70 |
| Qg
@10V
(nC) |
/ |
| Temperature |
-55℃~150℃ |
| ESD |
NO |
| Package (mm) |
DFN 3.3X3.3-8L |
Trench Technology Power MOSFET
Low RDS(ON)
Low Gate Charge
Low Gate Resistance
100% UIS Tested
VDS RDS(ON) Typ. ID
-20V 3.4mΩ @ VGS = -4.5V -70A
4.2mΩ @ VGS = -2.5V