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AWP402069PDNR

20V P-channel MOSFET

Datasheet :
Preview - AWP402069PDNR - Datasheet

Product details

Parameters

Type P
VDS (V) -20
VGS (V) ±10
VGS(th) typ.(V) -0.6
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) 4.4
RDS(ON)@2.5V max.(mΩ) 5.6
ID (A) -70
Qg @10V (nC) /
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 3.3X3.3-8L

Package | Pins | Size

DFN 3.3X3.3-8L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge Low Gate Resistance 100% UIS Tested

Description

VDS RDS(ON) Typ. ID -20V 3.4mΩ @ VGS = -4.5V -70A 4.2mΩ @ VGS = -2.5V

Technical documentation
Type
Title
Language
Date
Datasheet DS_AWP402069_EN_V1.0 英文   2026-04-15