EN
Home
>Products
/ Power management
/ MOSFET
/ Power MOSFET

AWP402062QDNR

20V N-channel + P-channel MOSFET

Datasheet :
Preview - AWP402062QDNR - Datasheet

Product details

Parameters

Type N+P
VDS (V) NMOS: 20 PMOS: -20
VGS (V) ±12
VGS(th) typ.(V) NMOS: 0.8 PMOS: -0.7
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) NMOS: 60 PMOS: 110
RDS(ON)@2.5V max.(mΩ) NMOS: 80 PMOS: 140
ID (A) NMOS: 3.5 PMOS: -2.3
Qg @10V (nC) /
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 2X2-6L

Package | Pins | Size

DFN 2X2-6L

Features

Trench Technology Power MOSFET High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch

Description

VDS RDS(ON) Typ. ID 20V 32mΩ@ VGS= 4.5V 3.5A 49mΩ@ VGS= 2.5V -20V 68mΩ@ VGS= 4.5V -2.3A 95mΩ@ VGS= 2.5V

Technical documentation
Type
Title
Language
Date
Datasheet DS_AWP402062_EN_V1.0 英文   2026-07-14