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AW401005QCSR

12V Dual N-Channel MOSFET

Datasheet :
Preview - AW401005QCSR - Datasheet
Ref.Price
  • 1-99￥4.01
  • 100-249￥3.29
  • 250-499￥2.65
  • 500-999￥2.09
  • 1000+￥1.61

Product details

Type Dual N
VDS (V) 12
VGS (V) ±8
VGS(th) typ.(V) 0.85
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) 2.95
RDS(ON)@2.5V max.(mΩ) 6.1
ID (A) 23
Qg @10V (nC) /
Temperature -55℃~150℃
ESD YES
Package (mm) WLCSP 2.98X1.49-10L
WLCSP 2.98X1.49-10L
Low source-source on resistance RSS(ON) Typ.= 2.20mΩ (VGS= 4.5V) Common-Drain type ESD Diode-Protected Gate 2kV ESD HBM Pb-Free, Halogen Free and RoHS compliance Applications WLCSP 2.98X1.49-10L
VSS RSS(ON) Max. 12V 2.95 mΩ @ VGS= 4.5V 3.35 mΩ @ VGS= 3.8V 4.20 mΩ @ VGS= 3.1V 6.10 mΩ @ VGS= 2.5V

Technical documentation
Type
Title
Date
Datasheet DS_AW401005_EN_V1.3   2025-12-01

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

Evaluation board

AW401005QCSR EVB V1.0 — The AW401005QCSR EVB V1.0 is used to verify the basic parameters of the AW401005QCSR. The sense points of the device's drain, source, and gate terminals are all separate from the power path, making testing convenient. It can be used with an EVM board with a control IC to verify lithium battery protection functions.

Used to verify the basic parameters of AW401005QCSR

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Hardware development

Evaluation board

AW401005QCSR EVB V1.0 — The AW401005QCSR EVB V1.0 is used to verify the basic parameters of the AW401005QCSR. The sense points of the device's drain, source, and gate terminals are all separate from the power path, making testing convenient. It can be used with an EVM board with a control IC to verify lithium battery protection functions.

Used to verify the basic parameters of AW401005QCSR

View options