| Type | Dual N |
| VDS (V) | 12 |
| VGS (V) | ±8 |
| VGS(th) typ.(V) | 0.85 |
| RDS(ON)@10V max.(mΩ) | / |
| RDS(ON)@4.5V max.(mΩ) | 2.95 |
| RDS(ON)@2.5V max.(mΩ) | 6.1 |
| ID (A) | 23 |
| Qg @10V (nC) | / |
| Temperature | -55℃~150℃ |
| ESD | YES |
| Package (mm) | WLCSP 2.98X1.49-10L |
| WLCSP 2.98X1.49-10L |
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유형
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제목
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언어
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날짜 | |||
|---|---|---|---|---|---|---|
| Datasheet | DS_AW401005_EN_V1.3 | 英文 | 2025-12-01 | |||
| New product launch | 艾为电子推出低导通阻抗高可靠性锂电池充电保护MOSFET | 中文 | 2024-04-22 |
평가 보드
AW401005QCSR EVB V1.0 — The AW401005QCSR EVB V1.0 is used to verify the basic parameters of the AW401005QCSR. The sense points of the device's drain, source, and gate terminals are all separate from the power path, making testing convenient. It can be used with an EVM board with a control IC to verify lithium battery protection functions.
Used to verify the basic parameters of AW401005QCSR
평가 보드
AW401005QCSR EVB V1.0 — The AW401005QCSR EVB V1.0 is used to verify the basic parameters of the AW401005QCSR. The sense points of the device's drain, source, and gate terminals are all separate from the power path, making testing convenient. It can be used with an EVM board with a control IC to verify lithium battery protection functions.
Used to verify the basic parameters of AW401005QCSR
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