AW13612PFDR-Q1

0.1-5.925GHz SPDT Switch for High Power Applications

Datasheet :

Preview - AW13612PFDR-Q1 - Datasheet

Ref.Price

1-99￥8.12
100-249￥6.66
250-499￥5.36
500-999￥4.22
1000+￥3.25

Product details

Frequency (GHz)	0.1~5.925
Switch Feature	SPDT
Control Interface	GPIO
VDD (Min) (V)	1.65
VDD (Max) (V)	3.3
VIO (Min) (V)	/
VIO (Max) (V)	/
P0.1dB (dBm)	40
IL (Min) (dB)	0.22
IL (Max) (dB)	0.66
ISO (Max) (dB)	42
ISO (Min) (dB)	30
Temperature	-40℃~105℃
Package (mm)	FCDFN 1.1X0.7-6L

FCDFN 1.1X0.7-6L

1.AEC-Q100 Grade 2 2.Broadband frequency range: 0.1 to 5.925GHz 3.High power handing capability of up to 40dBm 4.Low insertion loss: 0.66dB typical @ 5.925GHz 5.High isolation: 26dB typical @ 5.925GHz 6.High switching speed: 1.5μs typical 7.Low harmonic generation 8.Small FCDFN 1.1X0.7-6L package

The AW13612PFDR-Q1 is a single-pole dual-throw switch with high power handing capability of up to 40dBm and low insertion loss. It can be used to support band switching and mode switching for GSM, WCDMA, LTE, and NR applications. The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pins as referenced in the chip block diagram and the control logic. The AW13612PFDR-Q1 is provided in a compact FCDFN 1.1X0.7-6L package.

Technical documentation

	Type	Title			Date
	Datasheet	DS_AW13612P-Q1_EN_V1.0			2025-09-23
	Product Design Guide	AW13612PFDR-Q1 Hardware Design Guide			2025-09-23

Design & development

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Hardware development

Evaluation board

AW13612FLR_EVB_V1.4 — This EVB is used to evaluate the performance of SPDT, including S-parameters, harmonics, P0.1dB, and other metrics.

Performance Evaluation for SPDT Switches with GPIO Interface

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Hardware development

Evaluation board

AW13612FLR_EVB_V1.4 — This EVB is used to evaluate the performance of SPDT, including S-parameters, harmonics, P0.1dB, and other metrics.

Performance Evaluation for SPDT Switches with GPIO Interface

View options