| Frequency (GHz) |
0.1~5.925 |
| Switch Feature |
SPDT |
| Control Interface |
GPIO |
| VDD (Min) (V) |
1.65 |
| VDD (Max) (V) |
3.3 |
| VIO (Min) (V) |
/ |
| VIO (Max) (V) |
/ |
| P0.1dB (dBm) |
40 |
| IL (Min) (dB) |
0.22 |
| IL (Max) (dB) |
0.66 |
| ISO (Max) (dB) |
42 |
| ISO (Min) (dB) |
30 |
| Temperature |
-40℃~105℃ |
| Package (mm) |
FCDFN 1.1X0.7-6L |
1.AEC-Q100 Grade 2
2.Broadband frequency range: 0.1 to 5.925GHz
3.High power handing capability of up to 40dBm
4.Low insertion loss: 0.66dB typical @ 5.925GHz
5.High isolation: 26dB typical @ 5.925GHz
6.High switching speed: 1.5μs typical
7.Low harmonic generation
8.Small FCDFN 1.1X0.7-6L package
The AW13612PFDR-Q1 is a single-pole dual-throw switch with high power handing capability of up to 40dBm and low insertion loss. It can be used to support band switching and mode switching for GSM, WCDMA, LTE, and NR applications.
The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pins as referenced in the chip block diagram and the control logic.
The AW13612PFDR-Q1 is provided in a compact FCDFN 1.1X0.7-6L package.
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