EN

AW12022TQNR-Q1

0.1-5.925GHz DPDT Antenna Cross Switch

Product details

Parameters

Frequency (GHz) 0.1~5.925
Switch Feature DPDT
Control Interface GPIO
VDD (Min) (V) 1.65
VDD (Max) (V) 3.3
VIO (Min) (V) /
VIO (Max) (V) /
P0.1dB (dBm) 38.5
IL (Min) (dB) 0.25
IL (Max) (dB) 0.57
ISO (Max) (dB) 33
ISO (Min) (dB) 10
Temperature -40℃~105℃
Package (mm) QFN 1.5X1.1-10L

Package | Pins | Size

QFN 1.5X1.1-10L

Features

AEC-Q100 in Progress Broadband frequency range: 0.1 to 5.925GHz Wide VDD range: 1.65V to 3.3V GPIO interface for 1.0V to VDD positive control voltage Low insertion loss: 0.35dB typical @ 2.7GHz Max input RF power of 38.5dBm Excellent linearity and harmonic performance No DC blocking capacitors in typical application Small QFN 1.5X1.1-10L package

Description

The AW12022TQNR-Q1 is a Silicon-On-Insulator(SOI) DPDT switch with low insertion loss and high Isolation. It can be used to support band switching and mode switching for cellular 4G/5G, data cards and tablets. The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pin as referenced in the chip block diagram and the control logic. The chip allows power-supply voltages from 1.65V to 3.3V and the positive control voltages from 1.0V to VDD. The AW12022TQNR-Q1 is provided in a compact QFN 1.5X1.1-10L package.

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW12022T-Q1_EN_V1.0 英文   2025-09-23
Product Design Guide AW12022TQNR-Q1 Hardware Design Guide 英文   2025-09-23