EN

AWP406036NDNR

60V 0.9Ω N-channel MOSFET

Product details

Parameters

Type N
VDS (V) 60
VGS (V) ±20
VGS(th) typ.(V) 1.5
RDS(ON)@10V max.(mΩ) 2500
RDS(ON)@4.5V max.(mΩ) 3000
RDS(ON)@2.5V max.(mΩ) /
ID (A) 0.34
Qg @10V (nC) 1.45
Temperature -55℃~150℃
ESD YES
Package (mm) DFN 1X0.6-3L

Package | Pins | Size

DFN 1X0.6-3L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge ESD Protect

Description

VDS RDS(ON) Typ. ID 60V 0.9Ω@VGS=10V 0.34A 1.1Ω@VGS=4.5V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AWP406036_EN_V1.1 英文   2026-04-10