EN

AWP401051PDNR

20V P-channel MOSFET

Product details

Parameters

Type P
VDS (V) -12
VGS (V) ±12
VGS(th) typ.(V) -0.7
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) 13
RDS(ON)@2.5V max.(mΩ) 20
ID (A) -18
Qg @10V (nC) 24.4
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 2X2-6L

Package | Pins | Size

DFN 2X2-6L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge

Description

VDS RDS(ON) Typ. ID -12V 9mΩ @ VGS = -4.5V -18A 13mΩ @ VGS = -2.5V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AWP401051_EN_V1.0 英文   2026-04-15