EN

AWD86326DNR

Boost drive for high speed Piezo-electric ceramic pump with integrated current detection

Product details

Parameters

power_supply_min
PVDD (V) 28
Boost Type Boost
PO(W)(8&THD=1%) 1.5W@Vin=2.7,Vout=28V
IQ (mA) 5
ADC Channels 0
ADC (bit) 0
Capacitive Reactance 0
Control Interface GPIO
Protection /
Temperature -40℃~85℃
Package

Package | Pins | Size

DFN 3X3-14L

Features

 Integrated Boost DC/DC to Achieve 28V (MAX) Driven Voltage  VIN: 2.7V to 5.5V Operating Voltage Range  PWM Control Interface  High Speed Driver  Brief rise time and fall time  Low-Power Sleep Mode  Internal integrated ISNS current detection for f0 tracking  Over-Current Protection (OCP)  Over-temperature Protection(OTP)

Description

The AWD86326 device is a chip integrating a Boost circuit and an H-bridge driver, featuring ultra-low quiescent current consumption. It supports low-voltage input of 2.7 to 5.5V and high-voltage maximum output of 28V, with PWM dual-channel control, and can drive capacitive loads. The IC uses a charge pump to drive the half-bridge of the N-channel MOSFET, which has a relatively high efficiency and can also achieve 100% PWM duty cycle drive. The integrated current sampling structure inside the IC supports current detection and regulation functions. The output current is proportionally scaled and output in real time through the ISNS pin. The main control terminal can track F0 or detect other status changes by collecting ISNS current., without the need for high-power shunt resistors, saving circuit board area and reducing system costs. In addition, the chip integrates over-current protection and over-temperature protection.

Technical documentation

Type
Title
Language
Date
Datasheet DS_AWD86326 _EN_V1.0 英文   2026-05-08
Reliability Report Reliability Qualification Report For AWD86326DNR 英文   2026-07-22

Design & development

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