EN

AW86562DNR

High Sensitivity Micropower Linear Hall-effect Sensor

Product details

Parameters

Output Type Analog
VDD (Min) (V) 2.5
VDD (Max) (V) 5.5
Sensitivity (mV/Gs) 5
Sleep Current (μA) 1
BandWidth (kHz) 10
Noise(mVrms) 2.4
Temperature -40℃~125℃
linearity(%) ±1%
Package (mm) DFN 3X2-6L

Package | Pins | Size

WBDFN 3X2-6L(0.75)

Features

Ratiometric linear hall effect magnetic sensor. Analog output with VREF / 2 quiescent offset High-impedance output during sleep mode. Operates from 2.5V and 5.5V power supplies Low-Power Sleep Mode With 0.6μA Maximum Sleep Current Sensitivity selection : AW86560DNR: 1.25mV/Gs AW86561DNR: 2.50mV/Gs AW86562DNR: 5.00mV/Gs AW86563DNR: 10.0mV/Gs Reference voltage (VREF pin). Temperature-stable quiescent voltage output and sensitivity Wide operating temperature range : -40°C to 125°C WBDFN 3mm×2mm×0.75mm-6L package

Description

The AW8656X are linear Hall effect IC that respond proportionally to magnetic flux density.. The quiescent output voltage of these devices is 50 % nominal of the ratiometric supply reference voltage applied to the VREF pin of the device. The AW8656X consume 2.5 mA of current in the active mode. minimize current consumption to less than 0.6μA through the addition of a user-selectable sleep mode. The AW8656X features magnet temperature compensation to counteract how magnets drift for linear performance across a wide -40°C to +125°C temperature range. Device options for no temperature compensation of magnet drift are also available. The AW8656X are available in 6 pin DFN and are rated over -40°C to 125°C. The package is available in a lead (Pb)free version.

Technical documentation

Type
Title
Language
Date
Product Design Guide AW8656XDNR Hardware Design Guide 英文   2023-11-22
Datasheet DS_AW8656XDNR_EN_V1.1 英文   2024-04-25

Design & development

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