AW86562DNR

High Sensitivity Micropower Linear Hall-effect Sensor

参考价格
  • 1-99¥4.61
  • 100-249¥3.78
  • 250-499¥3.05
  • 500-999¥2.40
  • 1000+¥1.85

产品详细信息

参数

Output Type Analog
VDD (Min) (V) 2.5
VDD (Max) (V) 5.5
Sensitivity (mV/Gs) 5
Sleep Current (μA) 1
BandWidth (kHz) 10
Noise(mVrms) 2.4
Temperature -40℃~125℃
linearity(%) ±1%
Package (mm) DFN 3X2-6L

封装 | 引脚 | 尺寸

WBDFN 3X2-6L(0.75)

特性

Ratiometric linear hall effect magnetic sensor. Analog output with VREF / 2 quiescent offset High-impedance output during sleep mode. Operates from 2.5V and 5.5V power supplies Low-Power Sleep Mode With 0.6μA Maximum Sleep Current Sensitivity selection : AW86560DNR: 1.25mV/Gs AW86561DNR: 2.50mV/Gs AW86562DNR: 5.00mV/Gs AW86563DNR: 10.0mV/Gs Reference voltage (VREF pin). Temperature-stable quiescent voltage output and sensitivity Wide operating temperature range : -40°C to 125°C WBDFN 3mm×2mm×0.75mm-6L package

说明

The AW8656XDNR are linear Hall effect IC that respond proportionally to magnetic flux density.The quiescent output voltage of these devices is 50 % nominal of the ratiometric supply reference voltage applied to the VREF pin of the device.
The AW8656XDNR consume 2.6 mA of current in the active mode. minimize current consumption to less than 1 μA through the addition of a userselectable sleep mode.
The AW8656XDNR features magnet temperature compensation to counteract how magnets drift for linear performance across a wide –40°C to +125°C temperature range. Device options for no temperature compensation of magnet drift are also available.
The AW8656XDNR are available in 6 pin DFN and are rated over –40°C to +125°C. The package is available in a lead (Pb)free version.

技术文档

类型
项目标题
语言
日期
产品设计指南 AW8656XDNR 硬件设计指南 中文   2023-08-21
产品设计指南 AW8656XDNR Hardware Design Guide 英文   2023-11-22
产品手册 DS_AW8656XDNR_EN_V1.1 英文   2024-04-25

设计和开发

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