EN

AW86561CDNR

High Sensitivity Micropower Linear Hall-effect Sensor

Product details

Parameters

Output Type Analog
VDD (Min) (V) 2.5
VDD (Max) (V) 5.5
Sensitivity (mV/Gs)
Sleep Current (μA) 1.5
BandWidth (kHz) 10
Noise(mVrms) 0.96
Temperature -40℃~125℃
linearity(%) ±1
Package (mm) DFN 3X2-6L

Package | Pins | Size

DFN 3X2-6L

Features

Ratiometric linear hall effect magnetic sensor. Analog output with VREF / 2 quiescent offset High-impedance output during sleep mode. Operates from 2.5V and 5.5V power supplies Less than 1.5μA power consumption in the sleep mode. Sensitivity selection AW86561CDNR: 2.50mV/Gs Reference voltage (VREF pin). Temperature-stable quiescent voltage output and sensitivity Wide operating temperature range: -40℃ to 125℃ WBDFN 3mm X 2mm X 0.75mm-6L package

Description

The AW86561CDNR are linear Hall effect IC that respond proportionally to magnetic flux density.. The quiescent output voltage of these devices is 50 % nominal of the ratiometric supply reference voltage applied to the VREF pin of the device The AW86561CDNR consume 2.6 mA of current in the active mode. minimize current consumption to less than 1 μA through the addition of a user-selectable sleep mode. The AW86561CDNR features magnet temperature compensation to counteract how magnets drift for linear performance across a wide –40°C to +125°C temperature range. Device options for no temperature compensation of magnet drift are also available The AW86561CDNR are available in 6 pin DFN and are rated over –40°C to +125°C. The package is available in a lead (Pb)free version

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW86561CDNR_EN_V1.0 英文   2025-03-20

Design & development

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