EN

AW403052PSTR

-30V 43mΩ P-channel MOSFET

Product details

Parameters

Type P
VDS (V) -30
VGS (V) ±12
VGS(th) typ.(V) -0.9
RDS(ON)@10V max.(mΩ) 65
RDS(ON)@4.5V max.(mΩ) 75
RDS(ON)@2.5V max.(mΩ) 90
ID (A) -4.2
Qg @10V (nC) 17
Temperature -55℃~150℃
ESD NO
Package (mm)

Package | Pins | Size

Features

Trench Technology Power MOSFET Exceptional on-resistance and maximum DC current capability

Description

VDS RDS(ON) Typ. ID -30V 43mΩ @ VGS = -10.0V -4.2A 52mΩ @ VGS = -4.5V 72mΩ @ VGS = -2.5V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW403052_EN_V1.0 英文   2025-05-09