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AW403001NDNR

30V N-Channel MOSFET

Datasheet :
Preview - AW403001NDNR - Datasheet
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Product details

Type N
VDS (V) 30
VGS (V) ±20
VGS(th) typ.(V) 1.8
RDS(ON)@10V max.(mΩ) 13
RDS(ON)@4.5V max.(mΩ) 15
RDS(ON)@2.5V max.(mΩ) /
ID (A) 12
Qg @10V (nC) 28
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 2X2-6L
DFN 2X2-6L
Low on-state resistance
RoHS compliant
100% UIS tested
100% Rg tested
DFN 2mmX2mmX0.75mm-6L Package
VDS 30V
RDS(ON) 10.5 mΩ (Typ.)@10V
12.5 mΩ (Typ.)@4.5V
ID 12A

Technical documentation
Type
Title
Date
Datasheet DS_AW403001_EN_V1.2   2023-06-06

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

Evaluation board

MOS DFN2.0x2.0-6L V1.0 — MOS DFN2.0x2.0-6L V1.0 can be used for parameter verification of DFN2.0x2.0-6L packages. The sense points of the device's drain, source, and gate terminals are all separate from the power path leads, making testing more convenient.

Used to verify the basic parameters of theDFN2.0x2.0-6L series power MOSFETs

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Hardware development

Evaluation board

MOS DFN2.0x2.0-6L V1.0 — MOS DFN2.0x2.0-6L V1.0 can be used for parameter verification of DFN2.0x2.0-6L packages. The sense points of the device's drain, source, and gate terminals are all separate from the power path leads, making testing more convenient.

Used to verify the basic parameters of theDFN2.0x2.0-6L series power MOSFETs

View options