| Type |
P |
| VDS
(V) |
-20 |
| VGS
(V) |
±12 |
| VGS(th) typ.(V) |
-0.7 |
| RDS(ON)@10V max.(mΩ) |
/ |
| RDS(ON)@4.5V max.(mΩ) |
22 |
| RDS(ON)@2.5V max.(mΩ) |
27 |
| ID
(A) |
-11 |
| Qg
@10V
(nC) |
15.2 |
| Temperature |
-55℃~150℃ |
| ESD |
NO |
| Package (mm) |
DFN 2X2-6L |
Trench Technology Power MOSFET
Low RDS(ON)
Low Gate Charge
Low Gate Resistance
VDS RDS(ON) Typ. ID
-20V 13mΩ @ VGS = -4.5V -11A
17mΩ @ VGS = -2.5V