AW13612HFDR

0.6-7.125GHz SPDT Switch for High Power Applications

Datasheet :

Preview - AW13612HFDR - Datasheet

Ref.Price

1-99￥1.95
100-249￥1.60
250-499￥1.28
500-999￥1.01
1000+￥0.78

Product details

Frequency (GHz)	0.1~7.125
Switch Feature	SPDT HPower
Control Interface	GPIO
VDD (Min) (V)	1.65
VDD (Max) (V)	3.3
VIO (Min) (V)	/
VIO (Max) (V)	/
P0.1dB (dBm)	38.5
IL (Min) (dB)	0.24
IL (Max) (dB)	0.73
ISO (Max) (dB)	42
ISO (Min) (dB)	24
Temperature	-40℃~105℃
Package (mm)	FCDFN 1.1X0.7-6L

FCDFN 1.1X0.7-6L

1. 工作频率范围：0.1GHz到7.125GHz 2. 功率容量：40dBm 3. 插入损耗：0.55dB@6.0GHz 4. 隔离度：25dB@6.0GHz 5. 切换时间：1μs 6. 封装：FCDFN (6引脚，1.1x 0.7毫米)

The AW13612HFDR is a single-pole dual-throw switch with high power handing capability of up to 38dBm and low insertion loss. It can be used to support band switching and mode switching for GSM, WCDMA, LTE, and NR applications.
The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pins as referenced in the chip block diagram and the control logic.
The AW13612HFDR is provided in a compact FCDFN 1.1mm x 0.7mm x 0.37mm-6L package.

Technical documentation

	Type	Title			Date
	Datasheet	DS_AW13612HFDR_EN_V1.0			2024-04-07
	Product Design Guide	AW13612HFDR Hardware Design Guide			2024-05-24

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

Evaluation board

AW13612FLR_EVB_V1.4 — This EVB is used to evaluate the performance of SPDT, including S-parameters, harmonics, P0.1dB, and other metrics.

Performance Evaluation for SPDT Switches with GPIO Interface

View options

Hardware development

Evaluation board

AW13612FLR_EVB_V1.4 — This EVB is used to evaluate the performance of SPDT, including S-parameters, harmonics, P0.1dB, and other metrics.

Performance Evaluation for SPDT Switches with GPIO Interface

View options