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AWR15008HDNR

Low Noise Amplifier with Bypass Switch for LTE

Product details

Parameters

Frequency (GHz) 2.3~2.69GHz
VCC (Min) (V) 1.5
VCC (Max) (V) 3.3
Gain(dB) 18.5
NF(dB) 0.72
Icc (mA) 11
Temperature -40℃~105℃
P1dB (dBm) -14.5
Package (mm) DFN 1.1X0.7-6L

Package | Pins | Size

DFN 1.1X0.7-6L

Features

1.Operating frequency: 2300MHz to 2690MHz 2.Noise figure: 0.72dB 3.High power gain: 18.5dB 4.Insertion loss in bypass mode: -5dB 5.Supply voltage: 1.5V to 3.3V 6.Gain mode current 11mA 7.Bypass mode current <1uA 9.Integrated matching for the output 10.DFN 1.1X0.7-6L

Description

1. The AWR15008HDNR is a Low Noise Amplifier with bypass designed for LTE receiver applications. The AWR15008HDNR requires only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution. 2. The AWR15008HDNR achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.5V up to 3.3V. All these features make AWR15008HDNR an excellent choice for LTE LNA as it improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces the overall cost. 3. The AWR15008HDNR is available in a small lead-free, RoHS-Compliant, DFN 1.1X0.7-6L.

Technical documentation

Type
Title
Language
Date
Product Design Guide AWR15008HDNR Hardware Design Guide 英文   2026-01-29
Datasheet DS_AWR15008H_EN_V1.0 英文   2026-06-02