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AWP406032NSTR

60V N-Channel MOSFET

Datasheet :
Preview - AWP406032NSTR - Datasheet

Product details

Parameters

Type N
VDS (V) 60
VGS (V) ±20
VGS(th) typ.(V) 2.6
RDS(ON)@10V max.(mΩ) 8.0
RDS(ON)@4.5V max.(mΩ) /
RDS(ON)@2.5V max.(mΩ) /
ID (A) 80
Qg @10V (nC) 30
Temperature -55℃~150℃
ESD NO
Package (mm) TO252-2L

Package | Pins | Size

TO252-2L

Features

Split Gate Trench Technology Low RDS(ON) Low Gate Charge Low Gate Resistance 100% UIS Tested

Description

VDS RDS(ON) Typ. ID 60V 6.0 mΩ @ VGS = 10V 80A

Technical documentation
Type
Title
Language
Date
Datasheet DS_AWP406032_EN_V1.0 英文   2025-08-06