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AWP405008PSTR

50V P-channel MOSFET

Datasheet :
Preview - AWP405008PSTR - Datasheet

Product details

Parameters

Type P
VDS (V) -50
VGS (V) ±20
VGS(th) typ.(V) -1.6
RDS(ON)@10V max.(mΩ) 4000
RDS(ON)@4.5V max.(mΩ) 5000
RDS(ON)@2.5V max.(mΩ) /
ID (A) -0.13
Qg @10V (nC) 5.4
Temperature -55℃~150℃
ESD YES
Package (mm) SOT23-3L

Package | Pins | Size

SOT23-3L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge ESD Protected

Description

VDS RDS(ON) Typ. ID -50V 2.3Ω @ VGS = -10V -0.13A 2.7Ω @ VGS = -4.5V

Technical documentation
Type
Title
Language
Date
Datasheet DS_AWP405008_EN_V1.0 英文   2026-03-09