EN

AWP403093PSTR

30V P-channel MOSFET

Product details

Parameters

Type P
VDS (V) -30
VGS (V) ±12
VGS(th) typ.(V) -0.8
RDS(ON)@10V max.(mΩ) 65
RDS(ON)@4.5V max.(mΩ) 75
RDS(ON)@2.5V max.(mΩ) 90
ID (A) -4.2
Qg @10V (nC) 10.8
Temperature -55℃~150℃
ESD NO
Package (mm) SOT23-3L

Package | Pins | Size

SOT23-3L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge

Description

VDS RDS(ON) Typ. ID -30V 40mΩ @ VGS = -10V -4.2A 48mΩ @ VGS = -4.5V 64mΩ @ VGS = -2.5V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AWP403093_EN_V1.0 英文   2026-03-16