EN

AWP402061NSTR

20V N-channel MOSFET

Product details

Parameters

Type N
VDS (V) 20
VGS (V) ±12
VGS(th) typ.(V) 0.7
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) 380
RDS(ON)@2.5V max.(mΩ) 450
ID (A) 0.75
Qg @10V (nC) /
Temperature -55℃~150℃
ESD YES
Package (mm) SOT723-3L

Package | Pins | Size

SOT723-3L

Features

Trench Technology Power MOSFET Low RDS(ON) Low Gate Charge ESD Protected

Description

VDS RDS(ON) Typ. ID 20V 161mΩ@ VGS= 4.5V 0.75A 229mΩ@ VGS= 2.5V 340mΩ@ VGS= 1.8V

Technical documentation

Type
Title
Language
Date
Datasheet DS_AWP402061_EN_V1.0 英文   2026-07-14