EN

AW86530ASTR

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

Product details

Parameters

Pole Type omnipolar
VDD (Min) (V) 1.6
VDD (Max) (V) 5.5
Sensitivity Bop (Gs) 20Gs
Sensitivity Brp (Gs) -20Gs
BHY (Gs) 40
IDD_AVG (mA) 0.082
IDD_Sleep (μA) 0.4
Temperature -40℃~85℃
Output Type Push Pull
Package (mm) SOT23-3L

Package | Pins | Size

SOT23-3L

Features

High sensitive Latch operation. Micropower operation.Typ 82uA (average: VDD=1.8V). Ultra small package: SOT23-3L. On board voltage regulator for 1.6V to 5.5V range. Wide operating temperature range: -40℃ to 85℃. ESD (HBM) > 6KV.

Description

AW86530ASTR is a high-sensitivity micropower Digital latch hall effect sensor IC with internal pull up and pull down capability. AW86530ASTR uses a hibernating clocking system to reduce power consumption, which the total power consumption in normal operation is typically 82A with a 1.8V power source. Mainly designed for portable devices such as encoder, portable medical devices and flow meters etc. The supply range of AW86530ASTR is 1.6V to 5.5V to support portable equipment. To minimize PCB space, the AW86530ASTR has ultra small package: SOT23-3L . When the magnetic field strength is greater than Bop, then the device output is pulled low; When the magnetic field strength is less than Brp, then the device output is pulled high; When the magnetic field strength is between Bop and Brp, then the device output remains in the previous state.

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW86530A_EN_V1.0 英文   2026-07-17