EN

AW86511EDCFDR

低灵敏度微功耗单极霍尔效应开关

Product details

Parameters

Pole Type unipolar
VDD (Min) (V) 1.6
VDD (Max) (V) 5.5
Sensitivity Bop (Gs) ±25Gs
Sensitivity Brp (Gs) ±18Gs
BHY (Gs) 7
IDD_AVG (μA) 0.8
IDD_Sleep (μA) 0.43
Channel 2
Temperature -40℃~85℃
Output Type Push Pull
Package (mm) FCDFN 0.8X0.8-4L

Package | Pins | Size

FCDFN 0.8X0.8-4L

Features

低灵敏度单极工作模式 微功耗工作,典型值 0.8uA(平均值:VDD=1.8V) 超小封装:FCDFN 0.8mm×0.8mm-4L 支持 1.6V 至 5.5V 范围 磁阈值选项:Bop=±25Gs, Brp=±18Gs 宽工作温度范围:-40°C 至 85°C

Description

AW86511EDCFDR is a high-sensitivity micropower unipolar Hall effect switch IC with internal pull up and pull down capability. AW86511EDCFDR uses a hibernating clocking system to reduce power consumption, which the total power consumption in normal operation is typically 0.8uA with a 1.8V power source. Mainly designed for portable devices such as laptop computer, smartphone and bluetooth headset etc. The supply range of AW86511EDCFDR is 1.6V to 5.5V to support portable equipment. The OUTN is activity with a north pole of sufficient magnetic field strength. When the magnetic flux density perpendicular to the package is large than operate point(BopN) , the output will be turned on (pulled down) and hold until B is lower than release point (BrpN). The OUTS is activity with a south pole of sufficient magnetic field strength. When the magnetic flux density perpendicular to the package is large than operate point(BopS) , the output will be turned on (pulled low) and held until B is lower than release point (BrpS).

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW86511EDCFDR_EN_V1.0 英文   2026-08-25