| Frequency (GHz) |
2.3~2.69GHz |
| VCC (Min) (V) |
1.5 |
| VCC (Max) (V) |
3.1 |
| Gain(dB) |
14.5 |
| NF(dB) |
1.1 |
| Icc (mA) |
7.5 |
| Temperature |
-40℃~85℃ |
| P1dB (dBm) |
-4 |
| Package (mm) |
FCDFN 1.1X0.7-6L |
1.Operating frequency 2300MHz to 2690MHz
2.Noise figure(NF) =1.1dB
3.High power gain =15.5dB
4.Ｉｎ band IIP3=+5.1dBm
5.Input 1dB compression point=-4dBm
6.Supply voltage: 1.5V to 3.1V
7.Supply current 7.5mA
8.Input and output DC decoupled
9.Requires only one input matching inductor
10.Integrated matching for the output
11.FCDFN 1.1mmX0.7mmX0.37mm -6L package
12.2kV HBM ESD protection (including RFIN and RFOUT pin)
The AW5008H1 is a Low Noise Amplifier designed for LTE receiver applications. The AW5008H1 requires only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution.
The AW5008H1 achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.5V up to 3.1V. All these features make AW5008H1 an excellent choice for LTE LNA as it improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces the overall cost.
The AW5008H1 is available in a small lead-free, RoHS-Compliant, FCDFN 1.1mmX0.7mmX0.37 mm -6L package.
