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AW403058NDNR

30V N-channel MOSFET

Datasheet :
Preview - AW403058NDNR - Datasheet

Product details

Parameters

Type N
VDS (V) 30
VGS (V) ±20
VGS(th) typ.(V) 1.5
RDS(ON)@10V max.(mΩ) 12
RDS(ON)@4.5V max.(mΩ) 18
RDS(ON)@2.5V max.(mΩ) /
ID (A) 16
Qg @10V (nC) 12
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 2X2-6L

Package | Pins | Size

DFN 2X2-6L

Features

Split Gate Trench Technology Low RDS(ON) Low Gate Charge Low Gate Resistance 100% UIS Tested

Description

VDS RDS(ON) Typ. ID 30V 8.5mΩ @ VGS = 10V 16A 12.0mΩ @ VGS = 4.5V

Technical documentation
Type
Title
Language
Date
Datasheet DS_AW403058_EN_V1.0 英文   2025-08-15