| Type |
N |
| VDS
(V) |
30 |
| VGS
(V) |
±20 |
| VGS(th) typ.(V) |
1.5 |
| RDS(ON)@10V max.(mΩ) |
12 |
| RDS(ON)@4.5V max.(mΩ) |
18 |
| RDS(ON)@2.5V max.(mΩ) |
/ |
| ID
(A) |
16 |
| Qg
@10V
(nC) |
12 |
| Temperature |
-55℃~150℃ |
| ESD |
NO |
| Package (mm) |
DFN 2X2-6L |
Split Gate Trench Technology
Low RDS(ON)
Low Gate Charge
Low Gate Resistance
100% UIS Tested
VDS RDS(ON) Typ. ID
30V 8.5mΩ @ VGS = 10V 16A
12.0mΩ @ VGS = 4.5V