EN

AW403003NDNR

30V 90A N-Channel MOSFET

Product details

Parameters

Type N
VDS (V) 30
VGS (V) ±16
VGS(th) typ.(V) 1.5
RDS(ON)@10V max.(mΩ) 3.1
RDS(ON)@4.5V max.(mΩ) 4.8
RDS(ON)@2.5V max.(mΩ) /
ID (A) 90
Qg @10V (nC) 30
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 3.3X3.3-8L

Package | Pins | Size

DFN 3.3X3.3-8L

Features

Advanced shielded-gate technology
Ultra-low on-resistance and gate-charge
RoHS compliant
•100% UIS tested
100% Rg tested
DFN 3.3mmX3.3mmX0.8mm-8L Package

Description

VDS30V
RDS(ON)2.3 mΩ (Typ.)@10V
3.3 mΩ (Typ.)@4.5V
ID90A

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW403003_EN_V1.1 英文   2023-06-06