EN

AW402007NDNR

20V 14A N-Channel MOSFET

Product details

Parameters

Type N
VDS (V) 20
VGS (V) ±12
VGS(th) typ.(V) /
RDS(ON)@10V max.(mΩ) /
RDS(ON)@4.5V max.(mΩ) 6.5
RDS(ON)@2.5V max.(mΩ) 8
ID (A) 14
Qg @10V (nC) 58
Temperature -55℃~150℃
ESD NO
Package (mm) DFN 2X2-6L

Package | Pins | Size

WBDFN 2X2-6L(0.75)

Features

Advanced trench technology Low on-resistance and gate-charge RoHS compliant 100% UIS tested 100% Rg tested DFN 2mmX2mmX0.75mm-6L Package

Description

VDS 20V RDS(ON) 5.5mΩ (Typ.)@4.5V 6.5mΩ (Typ.)@2.5V 8.6mΩ (Typ.)@1.8V ID 14A

Technical documentation

Type
Title
Language
Date
Datasheet DS_AW402007_EN_V1.0 英文   2024-09-09