| Frequency (GHz) |
0.1~6 |
| Switch Feature |
DPDT Antenna |
| Control Interface |
GPIO |
| VDD (Min) (V) |
1.65 |
| VDD (Max) (V) |
3.3 |
| VIO (Min) (V) |
/ |
| VIO (Max) (V) |
/ |
| P0.1dB (dBm) |
39 |
| IL (Min) (dB) |
0.29 |
| IL (Max) (dB) |
0.39 |
| ISO (Max) (dB) |
33 |
| ISO (Min) (dB) |
30 |
| Temperature |
-40℃~85℃ |
| Package (mm) |
QFN 1.5X1.1-10L |
• Broadband frequency range: 0.1 to 6.0GHz
• Wide VDD range: 1.65V to 3.3V
• GPIO interface for 1.0V to VDD positive control voltage
• Low insertion loss: 0.41dB typical @ 2.7GHz
• Max input RF power of 39dBm
• Excellent linearity and harmonic performance
• No DC blocking capacitors in typical application
• Small WBQFN (1.5mm x 1.1mm x 0.45mm -10L) package
The AW12022TQNR is a Silicon-On-Insulator(SOI) DPDT switch with low insertion loss and high Isolation. It can be used to support band switching and mode switching for cellular 4G/5G, data cards and tablets.
The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pin as referenced in the chip block diagram and the control logic. The chip allows power-supply voltages from 1.65V to 3.3V and the positive control voltages from 1.0V to VDD.
The AW12022TQNR is provided in a compact WBQFN 1.5mm x 1.1mm x 0.45mm -10L package.
