AW12022TQNR

0.1-6GHz DPDT Antenna Cross Switch

参考价格
  • 1-99¥1.77
  • 100-249¥1.45
  • 250-499¥1.17
  • 500-999¥0.92
  • 1000+¥0.71

产品详细信息

参数

Frequency (GHz) 0.1~6
Switch Feature DPDT Antenna
Control Interface GPIO
VDD (Min) (V) 1.65
VDD (Max) (V) 3.3
VIO (Min) (V) /
VIO (Max) (V) /
P0.1dB (dBm) 39
IL (Min) (dB) 0.29
IL (Max) (dB) 0.39
ISO (Max) (dB) 33
ISO (Min) (dB) 30
Temperature -40℃~85℃
Package (mm) QFN 1.5X1.1-10L

封装 | 引脚 | 尺寸

QFN 1.5X1.1-10L

特性

• Broadband frequency range: 0.1 to 6.0GHz
• Wide VDD range: 1.65V to 3.3V
• GPIO interface for 1.0V to VDD positive control voltage
• Low insertion loss: 0.41dB typical @ 2.7GHz
• Max input RF power of 39dBm
• Excellent linearity and harmonic performance
• No DC blocking capacitors in typical application
• Small WBQFN (1.5mm x 1.1mm x 0.45mm -10L) package

说明

The AW12022TQNR is a Silicon-On-Insulator(SOI) DPDT switch with low insertion loss and high Isolation. It can be used to support band switching and mode switching for cellular 4G/5G, data cards and tablets. The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pin as referenced in the chip block diagram and the control logic. The chip allows power-supply voltages from 1.65V to 3.3V and the positive control voltages from 1.0V to VDD. The AW12022TQNR is provided in a compact WBQFN 1.5mm x 1.1mm x 0.45mm -10L package.

技术文档

类型
项目标题
语言
日期
产品手册 DS_AW12022TQNR_6GHz_DPDT_EN_V1.1 英文   2023-06-06
Checklist CL_客户_项目_AW12022TQNR_Customer_CN_V1.0 中文   2026-02-02
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设计和开发

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