AW12022HQNR

Broadband frequency range: 0.1 to 6.0GHz Wide VDD range: 1.65V to 3.3V GPIO interface for 0.75V to VDD positive control voltage Low insertion loss: 0.38dB typical @ 2.7GHz Max input RF power of 38.5dBm Excellent linearity and harmonic performance No DC blocking capacitors in typical application

产品手册：

在线预览 - AW12022HQNR - 产品手册

参考价格

1-99￥1.92
100-249￥1.58
250-499￥1.27
500-999￥1.00
1000+￥0.77

产品详细信息

参数

Frequency (GHz)	0.1~6
Switch Feature	DPDT
Control Interface	GPIO
VDD (Min) (V)	1.65
VDD (Max) (V)	3.3
VIO (Min) (V)	/
VIO (Max) (V)	/
P0.1dB (dBm)	38.5
IL (Min) (dB)	0.27
IL (Max) (dB)	0.65
ISO (Max) (dB)	33
ISO (Min) (dB)	17
Temperature	-40℃~105℃
Package (mm)	QFN 1.5X1.1-10L

封装 | 引脚 | 尺寸

WBQFN 1.5X1.1-10L(0.45)

特性

The AW12022HQNR is a Silicon-On-Insulator(SOI) DPDT switch with low insertion loss and high Isolation. It can be used to support band switching and mode switching for cellular 4G/5G, data cards and tablets. The symmetrical design of internal ports makes it convenient for PCB routing and adjustment of receiving and transmitting signals. The band/mode switching is realized by the GPIO pin as referenced in the chip block diagram and the control logic. The chip allows power-supply voltages from 1.65V to 3.3V and the positive control voltages from 0.75V to VDD.

技术文档

类型	项目标题	语言	日期
产品手册	DS_AW12022HQNR_EN_V1.0	英文	2024-05-24
产品设计指南	AW12022HQNR Hardware Design Guide	英文	2024-07-02
技术帖	【技术帖】80后、90后童年回忆升级！艾为游戏掌机方案助力时代新宠	中文	2024-08-12
技术帖	【技术帖】揭秘车载氛围灯：技术原理、应用场景与未来趋势	中文	2024-08-02

设计和开发

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硬件开发

评估板

AW12X22_EVB_V1.3 — 该款EVB用于DPDT开关的S参数、P0.1dB、谐波等性能评估。

适用于GPIO控制的DPDT开关性能评估

了解详情

硬件开发

评估板

AW12X22_EVB_V1.3 — 该款EVB用于DPDT开关的S参数、P0.1dB、谐波等性能评估。

适用于GPIO控制的DPDT开关性能评估

了解详情