| Frequency (GHz) |
1.425~2.2GHz和2.3~2.7GHz |
| VCC (Min) (V) |
1.6 |
| VCC (Max) (V) |
3.1 |
| Gain(dB) |
21 |
| NF(dB) |
0.6 |
| Icc (mA) |
10.6 |
| Temperature |
-40℃~105℃ |
| P1dB (dBm) |
-13 |
| Package (mm) |
DFN 1.1X0.7-6L |
Operating frequency: Middle-Band (MB): 1425MHz to 2200MHz High-Band (HB): 2300MHz to 2700MHz
Noise figure: 0.6dB@MB, 0.75@HB
High power gain: 21dB@MB, 19.5dB@HB
Insertion loss in bypass mode: 5dB@MB, 5.5dB@HB
Supply voltage: 1.6V to 3.1V
Gain mode current 10.6mA
Bypass mode current <1uA
Input and output DC decoupled
DFN 1.1X0.7-6L
The AW5008HGDNR is a Low Noise Amplifier with bypass designed for LTE receiver applications. The AW5008HGDNR requires only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution.
The AW5008HGDNR achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.6V up to 3.1V. All these features make AW5008HGDNR an excellent choice for LTE LNA as it improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces the overall cost.
The AW5008HGDNR is available in a small lead-free, RoHS-Compliant, DFN 1.1X0.7-6L.
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