AW5008H2FDR

Low Noise Amplifier with Bypass Switch for LTE High Band

参考价格
  • 1-99¥1.08
  • 100-249¥0.88
  • 250-499¥0.71
  • 500-999¥0.56
  • 1000+¥0.43

产品详细信息

参数

Frequency (GHz) 2.3~2.69GHz
VCC (Min) (V) 1.5
VCC (Max) (V) 3.1
Gain(dB) 15.5
NF(dB) 1.1
Icc (mA) 7.5
Temperature -40℃~85℃
P1dB (dBm) -4
Package (mm) FCDFN 1.1X0.7-6L

封装 | 引脚 | 尺寸

FCDFN 1.1X0.7-6L

特性

1.Operating frequency 2300MHz to 2690MHz 2.Noise figure(NF) =1.1dB 3.High power gain =15.5dB 4.Insertion Loss in bypass mode =3.5dB 5.Gain mode IIP3ib=+5.1dBm 6.Gain mode input 1dB compression point=-4dBm 7.Bypass mode input 1dB compression point= +5.5dBm 8.Supply voltage: 1.5V to 3.1V 9.Gain mode current 7.5mA 10.Bypass mode current <1uA 11.Input and output DC decoupled 12.Requires only one input matching inductor 13.Integrated matching for the output 14.FCDFN 1.1mmX0.7mmX0.37mm -6L package 15.2kV HBM ESD protection (including RFIN and RFOUT pin)

说明

The AW5008H2 is a Low Noise Amplifier with bypass designed for LTE receiver applications. The AW5008H2 requires only one external input matching inductor, reduces assembly complexity and the PCB area, enabling a cost-effective solution. The AW5008H2 achieves low noise figure, high linearity, high gain, over a wide range of supply voltages from 1.5V up to 3.1V. All these features make AW5008H2 an excellent choice for LTE LNA as it improves sensitivity with low noise figure and high gain, provides better immunity against jammer signals with high linearity, reduces filtering requirement of preceding stage and hence reduces the overall cost. The AW5008H2 is available in a small lead-free, RoHS-Compliant, FCDFN 1.1mmX0.7mmX0.37 mm -6L package.

技术文档

类型
项目标题
语言
日期
产品手册 DS_AW5008H2_EN_V1.2 英文   2025-08-12