AW86512EDNSTR

Medium Sensitivity Micropower Omnipolar Hall-effect Switch

产品手册 :

在线预览 - AW86512EDNSTR-英语版 - 产品手册

参考价格：

1-99￥1.42
100-249￥1.16
250-499￥0.94
500-999￥0.74
1000+￥0.57

产品详细信息

Pole Type	omnipolar
VDD (Min) (V)	1.6
VDD (Max) (V)	5.5
Sensitivity Bop (Gs)	±32
Sensitivity Brp (Gs)	±27
BHY (Gs)	5
IDD_AVG (μA)	0.8
IDD_Sleep (μA)	0.43
Channel	1
Temperature	-40℃~85℃
Output Type	Open Drain
Package (mm)	SOT23-3L

WBSOT23-3L(1.25)

Medium sensitivity omnipolar operation Micropower operation: Typ 0.8μA (average:VDD=1.8V) On board voltage regulator for 1.6V to 5.5V range Magnetic threshold options (Sensitivity Bop, Brp) :Bop=±32Gs, Brp=±27Gs Industry-leading ultra-low power consumption AW86512EDNSTR: 20Hz sampling rate options Wide operating temperature range: -40°C to 85°C Open-drain output WBSOT23-3L package

The AW86512EDNSTR device is an ultra-low-power switch Hall effect sensor with Open-drain output, designed for the most compact and battery-sensitive systems. The supply range of AW86512EDNSTR is 1.6V to 5.5V to support portable equipment. To minimize PCB space, the AW86512EDNSTR have ultra small packages: WBSOT23-3L. When the magnetic field strength is greater than Bop, then the device output is pulled low; When the magnetic field strength is less than Brp, then the device output is pulled high; When the magnetic field strength is between Bop and Brp, then the device output remains in the previous state.

技术文档

	类型	项目标题		语言		日期
	产品手册	DS_AW86512EDNSTR_EN_V1.0		英文		2024-12-17
	产品设计指南	AW86512EDNSTR硬件设计指南		中文		2025-01-02

设计和开发

如需其他信息或资源，请查看下方列表，点击标题即可进入详情页面。

硬件开发

评估板

SWITCH HALL EVB V2.0 — SWITCH HALL EVB V2.0是艾为开关霍尔EVB评估板，可实现单芯片功能评估，以及用于磁场发生器结构适配通用评估板

艾为开关霍尔EVB评估板

了解详情

硬件开发

评估板

SWITCH HALL EVB V2.0 — SWITCH HALL EVB V2.0是艾为开关霍尔EVB评估板，可实现单芯片功能评估，以及用于磁场发生器结构适配通用评估板

艾为开关霍尔EVB评估板

了解详情