| Type | N |
| VDS (V) | 30 |
| VGS (V) | ±20 |
| VGS(th) typ.(V) | 1.8 |
| RDS(ON)@10V max.(mΩ) | 6 |
| RDS(ON)@4.5V max.(mΩ) | 7.5 |
| RDS(ON)@2.5V max.(mΩ) | / |
| ID (A) | 15.4 |
| Qg @10V (nC) | 28.5 |
| Temperature | -55℃~150℃ |
| ESD | NO |
| Package (mm) | DFN 2X2-6L |
| DFN 2X2-6L |
|
유형
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제목
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언어
|
날짜 | |||
|---|---|---|---|---|---|---|
| Datasheet | DS_AW403002_EN_V1.3 | 英文 | 2023-06-29 | |||
| Product Design Guide | AW4030XXNDNR / AW40400XNDNR硬件设计指南 | 中文 | 2025-03-17 | |||
| Checklist | CL_客户_项目_MOS_Customer_CN_V1.0 | 中文 | 2026-02-02 |
평가 보드
MOS DFN2.0x2.0-6L V1.0 — MOS DFN2.0x2.0-6L V1.0 can be used for parameter verification of DFN2.0x2.0-6L packages. The sense points of the device's drain, source, and gate terminals are all separate from the power path leads, making testing more convenient.
Used to verify the basic parameters of theDFN2.0x2.0-6L series power MOSFETs
평가 보드
MOS DFN2.0x2.0-6L V1.0 — MOS DFN2.0x2.0-6L V1.0 can be used for parameter verification of DFN2.0x2.0-6L packages. The sense points of the device's drain, source, and gate terminals are all separate from the power path leads, making testing more convenient.
Used to verify the basic parameters of theDFN2.0x2.0-6L series power MOSFETs
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