| BW(GHz) | 1.4 |
| Surge(V) | 35 |
| DC(V) | 24 |
| Ron (Ω) | 5.9 |
| Temperature | -40℃~85℃ |
| IO Level (V) | 1.2 1.8 3.3 |
| Package (mm) | QFN 1.8X1.4-10L |
| QFN 1.8X1.4-10L |
|
タイプ
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タイトル
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言語
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日付 | |||
|---|---|---|---|---|---|---|
| Product User Guide | AW35752CQNR_EVB_User’s_Guide | 中文 | 2024-12-26 | |||
| Product Design Guide | AW35752C_Hardware_Design_Guide | 中文 | 2024-12-31 | |||
| Datasheet | DS_AW35752C_EN_V1.1 | 英文 | 2025-05-21 |
評価ボード
AW35752AQNR EVB V1.0 — AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
評価ボード
AW35752AQNR EVB V1.0 — AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
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