| BW(GHz) | 1.2 |
| Surge(V) | 35 |
| DC(V) | 24 |
| Ron (Ω) | 5.9 |
| Temperature | -40℃~85℃ |
| IO Level (V) | 1.8 |
| Package (mm) | QFN 1.8X1.4-10L |
| WBQFN 1.8X1.4-10L(0.55) |
|
タイプ
|
タイトル
|
言語
|
日付 | |||
|---|---|---|---|---|---|---|
| Product Design Guide | AW35752A 硬件设计指南 | 中文 | 2023-06-12 | |||
| Datasheet | DS_AW35752A_EN_V1.2 | 英文 | 2024-08-15 | |||
| Technical articles | 【技术帖】Type-C端口默默付出的Switch器件 | 中文 | 2024-11-04 |
評価ボード
AW35752AQNR EVB V1.0 — AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
評価ボード
AW35752AQNR EVB V1.0 — AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
AWS35732QNR EVB V1.0 is a hi-speed DPDT switch chip,AWS35732QNR EVB board， The key test points of the chip are drawn separately on the EVB board, which is convenient for testing.
沪ICP备10011954号 |
沪公网安备 31011202011955号
